H7N1002LSTL-E - MOSFET N-CH 100V LDPAK

Monaróir Cuid Uimhir

H7N1002LSTL-E

Inmheánach Cuid Uimhir

ABC-H7N1002LSTL-E

Monaróir

Renesas Electronics America

Cur Síos Achomair

MOSFET N-CH 100V LDPAK

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

86944 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór H7N1002LSTL-E i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Sonraíochtaí le haghaidh H7N1002LSTL-E

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : H7N1002LSTL-E

Monaróir : Renesas Electronics America

Tuairisc : MOSFET N-CH 100V LDPAK

Sraith : -

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 100V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 75A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10 mOhm @ 37.5A, 10V

Vgs (ú) (Max) @ Id : -

Muirear Geata (Qg) (Max) @ Vgs : 155nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 9700pF @ 10V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 100W (Tc)

Teocht Oibriúcháin : 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 4-LDPAK

Pacáiste / Cás : SC-83

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : H7N1 , H7N100

Doiciméid do H7N1002LSTL-E

datasheets : H7N1002LSTL-E.pdf

Gaolmhar le haghaidh H7N1002LSTL-E Renesas Electronics America

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