SI4190ADY-T1-GE3 - MOSFET N-CH 100V 18.4A 8SO

Monaróir Cuid Uimhir

SI4190ADY-T1-GE3

Inmheánach Cuid Uimhir

ABC-SI4190ADY-T1-GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET N-CH 100V 18.4A 8SO

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

689059 Pieces

Tagairt Praghas

~~USD 0.475025~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI4190ADY-T1-GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Sonraíochtaí le haghaidh SI4190ADY-T1-GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI4190ADY-T1-GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET N-CH 100V 18.4A 8SO

Sraith : TrenchFET®

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 100V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 18.4A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 15A, 10V

Vgs (ú) (Max) @ Id : 2.8V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 67nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1970pF @ 50V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 3W (Ta), 6W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 8-SO

Pacáiste / Cás : 8-SOIC (0.154", 3.90mm Width)

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI419 , SI4190AD

Doiciméid do SI4190ADY-T1-GE3

datasheets : SI4190ADY-T1-GE3.pdf

Gaolmhar le haghaidh SI4190ADY-T1-GE3 Vishay Siliconix

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