SI8900EDB-T2-E1 - MOSFET 2N-CH 20V 5.4A 10-MFP

Monaróir Cuid Uimhir

SI8900EDB-T2-E1

Inmheánach Cuid Uimhir

ABC-SI8900EDB-T2-E1

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET 2N-CH 20V 5.4A 10-MFP

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

380758 Pieces

Tagairt Praghas

~~USD 0.85965~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI8900EDB-T2-E1 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SI8900EDB-T2-E1

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI8900EDB-T2-E1

Monaróir : Vishay Siliconix

Tuairisc : MOSFET 2N-CH 20V 5.4A 10-MFP

Sraith : TrenchFET®

Stádas Cuid : Active

Cineál FET : 2 N-Channel (Dual) Common Drain

Gné FET : Logic Level Gate

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 5.4A

Rds On (Max) @ Id, Vgs : -

Vgs (ú) (Max) @ Id : 1V @ 1.1mA

Muirear Geata (Qg) (Max) @ Vgs : -

Toilleadh Ionchuir (Ciss) (Max) @ Vds : -

Cumhacht - Max : 1W

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : 10-UFBGA, CSPBGA

Pacáiste Gléas Soláthraithe : 10-Micro Foot™ CSP (2x5)

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI890 , SI8900E

Doiciméid do SI8900EDB-T2-E1

datasheets : SI8900EDB-T2-E1.pdf

Gaolmhar le haghaidh SI8900EDB-T2-E1 Vishay Siliconix

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