SI6913DQ-T1-GE3 - MOSFET 2P-CH 12V 4.9A 8-TSSOP

Monaróir Cuid Uimhir

SI6913DQ-T1-GE3

Inmheánach Cuid Uimhir

ABC-SI6913DQ-T1-GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET 2P-CH 12V 4.9A 8-TSSOP

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

1301510 Pieces

Tagairt Praghas

~~USD 0.251495~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI6913DQ-T1-GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SI6913DQ-T1-GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI6913DQ-T1-GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET 2P-CH 12V 4.9A 8-TSSOP

Sraith : TrenchFET®

Stádas Cuid : Active

Cineál FET : 2 P-Channel (Dual)

Gné FET : Logic Level Gate

Drain to Voltage Source (Vdss) : 12V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 4.9A

Rds On (Max) @ Id, Vgs : 21 mOhm @ 5.8A, 4.5V

Vgs (ú) (Max) @ Id : 900mV @ 400µA

Muirear Geata (Qg) (Max) @ Vgs : 28nC @ 4.5V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : -

Cumhacht - Max : 830mW

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : 8-TSSOP (0.173", 4.40mm Width)

Pacáiste Gléas Soláthraithe : 8-TSSOP

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI691 , SI6913D

Doiciméid do SI6913DQ-T1-GE3

datasheets : SI6913DQ-T1-GE3.pdf

Gaolmhar le haghaidh SI6913DQ-T1-GE3 Vishay Siliconix

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