SISH410DN-T1-GE3 - MOSFET N-CHAN PPAK 1212-8SH

Monaróir Cuid Uimhir

SISH410DN-T1-GE3

Inmheánach Cuid Uimhir

ABC-SISH410DN-T1-GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET N-CHAN PPAK 1212-8SH

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

1283520 Pieces

Tagairt Praghas

~~USD 0.25502~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SISH410DN-T1-GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SISH410DN-T1-GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SISH410DN-T1-GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET N-CHAN PPAK 1212-8SH

Sraith : TrenchFET®

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 22A (Ta), 35A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 20A, 10V

Vgs (ú) (Max) @ Id : 2.5V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1600pF @ 10V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 3.8W (Ta), 52W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : PowerPAK® 1212-8SH

Pacáiste / Cás : PowerPAK® 1212-8SH

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SISH4 , SISH410D

Doiciméid do SISH410DN-T1-GE3

datasheets : SISH410DN-T1-GE3.pdf

Gaolmhar le haghaidh SISH410DN-T1-GE3 Vishay Siliconix

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