PHD18NQ10T,118 - MOSFET N-CH 100V 18A DPAK

Monaróir Cuid Uimhir

PHD18NQ10T,118

Inmheánach Cuid Uimhir

ABC-PHD18NQ10T,118

Monaróir

NXP USA Inc.

Cur Síos Achomair

MOSFET N-CH 100V 18A DPAK

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

45721 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór PHD18NQ10T,118 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh PHD18NQ10T,118

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : PHD18NQ10T,118

Monaróir : NXP USA Inc.

Tuairisc : MOSFET N-CH 100V 18A DPAK

Sraith : TrenchMOS™

Stádas Cuid : Obsolete

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 100V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 18A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 90 mOhm @ 9A, 10V

Vgs (ú) (Max) @ Id : 4V @ 1mA

Muirear Geata (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 633pF @ 25V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 79W (Tc)

Teocht Oibriúcháin : -55°C ~ 175°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : DPAK

Pacáiste / Cás : TO-252-3, DPak (2 Leads + Tab), SC-63

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : PHD1 , PHD18NQ

Doiciméid do PHD18NQ10T,118

datasheets : PHD18NQ10T,118.pdf

Gaolmhar le haghaidh PHD18NQ10T,118 NXP USA Inc.

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