SQJ200EP-T1_GE3 - MOSFET 2N-CH 20V 20A/60A PPAK SO

Monaróir Cuid Uimhir

SQJ200EP-T1_GE3

Inmheánach Cuid Uimhir

ABC-SQJ200EP-T1_GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET 2N-CH 20V 20A/60A PPAK SO

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

1328418 Pieces

Tagairt Praghas

~~USD 0.2464~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SQJ200EP-T1_GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SQJ200EP-T1_GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SQJ200EP-T1_GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET 2N-CH 20V 20A/60A PPAK SO

Sraith : Automotive, AEC-Q101, TrenchFET®

Stádas Cuid : Active

Cineál FET : 2 N-Channel (Dual)

Gné FET : Standard

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 20A, 60A

Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 16A, 10V

Vgs (ú) (Max) @ Id : 2V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 18nC @ 10V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 975pF @ 10V

Cumhacht - Max : 27W, 48W

Teocht Oibriúcháin : -55°C ~ 175°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : PowerPAK® SO-8 Dual

Pacáiste Gléas Soláthraithe : PowerPAK® SO-8 Dual Asymmetric

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SQJ20 , SQJ200E

Doiciméid do SQJ200EP-T1_GE3

datasheets : SQJ200EP-T1_GE3.pdf

Gaolmhar le haghaidh SQJ200EP-T1_GE3 Vishay Siliconix

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