SI5463EDC-T1-GE3 - MOSFET P-CH 20V 3.8A 1206-8

Monaróir Cuid Uimhir

SI5463EDC-T1-GE3

Inmheánach Cuid Uimhir

ABC-SI5463EDC-T1-GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET P-CH 20V 3.8A 1206-8

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

46272 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI5463EDC-T1-GE3 i stoc dhíol.

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Sonraíochtaí le haghaidh SI5463EDC-T1-GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI5463EDC-T1-GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET P-CH 20V 3.8A 1206-8

Sraith : -

Stádas Cuid : Obsolete

Cineál FET : P-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 3.8A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 62 mOhm @ 4A, 4.5V

Vgs (ú) (Max) @ Id : 450mV @ 250µA (Min)

Muirear Geata (Qg) (Max) @ Vgs : 15nC @ 4.5V

Vgs (Max) : ±12V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : -

Gné FET : -

Díscaoileadh Cumhachta (Max) : 1.25W (Ta)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 1206-8 ChipFET™

Pacáiste / Cás : 8-SMD, Flat Lead

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI546 , SI5463ED

Doiciméid do SI5463EDC-T1-GE3

datasheets : SI5463EDC-T1-GE3.pdf

Gaolmhar le haghaidh SI5463EDC-T1-GE3 Vishay Siliconix

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