SQ4949EY-T1_GE3 - MOSFET 2 P-CH 30V 7.5A 8SOIC

Monaróir Cuid Uimhir

SQ4949EY-T1_GE3

Inmheánach Cuid Uimhir

ABC-SQ4949EY-T1_GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET 2 P-CH 30V 7.5A 8SOIC

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

786716 Pieces

Tagairt Praghas

~~USD 0.41606~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SQ4949EY-T1_GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SQ4949EY-T1_GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SQ4949EY-T1_GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET 2 P-CH 30V 7.5A 8SOIC

Sraith : Automotive, AEC-Q101, TrenchFET®

Stádas Cuid : Active

Cineál FET : 2 P-Channel (Dual)

Gné FET : Standard

Drain to Voltage Source (Vdss) : 30V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 7.5A (Tc)

Rds On (Max) @ Id, Vgs : 35 mOhm @ 5.9A, 10V

Vgs (ú) (Max) @ Id : 2.5V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 30nC @ 10V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1020pF @ 25V

Cumhacht - Max : 3.3W

Teocht Oibriúcháin : -55°C ~ 175°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : 8-SOIC (0.154", 3.90mm Width)

Pacáiste Gléas Soláthraithe : 8-SOIC

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SQ494 , SQ4949E

Doiciméid do SQ4949EY-T1_GE3

datasheets : SQ4949EY-T1_GE3.pdf

Gaolmhar le haghaidh SQ4949EY-T1_GE3 Vishay Siliconix

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