IRFHM8363TRPBF - MOSFET 2N-CH 30V 11A 8PQFN

Monaróir Cuid Uimhir

IRFHM8363TRPBF

Inmheánach Cuid Uimhir

ABC-IRFHM8363TRPBF

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET 2N-CH 30V 11A 8PQFN

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

1700384 Pieces

Tagairt Praghas

~~USD 0.1925~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór IRFHM8363TRPBF i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh IRFHM8363TRPBF

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : IRFHM8363TRPBF

Monaróir : Infineon Technologies

Tuairisc : MOSFET 2N-CH 30V 11A 8PQFN

Sraith : HEXFET®

Stádas Cuid : Not For New Designs

Cineál FET : 2 N-Channel (Dual)

Gné FET : Logic Level Gate

Drain to Voltage Source (Vdss) : 30V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 11A

Rds On (Max) @ Id, Vgs : 14.9 mOhm @ 10A, 10V

Vgs (ú) (Max) @ Id : 2.35V @ 25µA

Muirear Geata (Qg) (Max) @ Vgs : 15nC @ 10V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1165pF @ 10V

Cumhacht - Max : 2.7W

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : 8-PowerVDFN

Pacáiste Gléas Soláthraithe : 8-PQFN (3.3x3.3), Power33

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : IRFH , IRFHM83

Doiciméid do IRFHM8363TRPBF

datasheets : IRFHM8363TRPBF.pdf

Gaolmhar le haghaidh IRFHM8363TRPBF Infineon Technologies

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