TK12E80W,S1X - MOSFET N-CH 800V 11.5A TO220

Monaróir Cuid Uimhir

TK12E80W,S1X

Inmheánach Cuid Uimhir

ABC-TK12E80W,S1X

Monaróir

Toshiba Semiconductor and Storage

Cur Síos Achomair

MOSFET N-CH 800V 11.5A TO220

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

226704 Pieces

Tagairt Praghas

~~USD 1.65~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór TK12E80W,S1X i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Sonraíochtaí le haghaidh TK12E80W,S1X

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : TK12E80W,S1X

Monaróir : Toshiba Semiconductor and Storage

Tuairisc : MOSFET N-CH 800V 11.5A TO220

Sraith : DTMOSIV

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 800V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 11.5A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 450 mOhm @ 5.8A, 10V

Vgs (ú) (Max) @ Id : 4V @ 570µA

Muirear Geata (Qg) (Max) @ Vgs : 23nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1400pF @ 300V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 165W (Tc)

Teocht Oibriúcháin : 150°C

Cineál Gléasta : Through Hole

Pacáiste Gléas Soláthraithe : TO-220

Pacáiste / Cás : TO-220-3

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : TK12 , TK12E8

Doiciméid do TK12E80W,S1X

datasheets : TK12E80W,S1X.pdf

Gaolmhar le haghaidh TK12E80W,S1X Toshiba Semiconductor and Storage

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