RQ3E100BNTB - MOSFET N-CH 30V 10A HSMT8

Monaróir Cuid Uimhir

RQ3E100BNTB

Inmheánach Cuid Uimhir

ABC-RQ3E100BNTB

Monaróir

Rohm Semiconductor

Cur Síos Achomair

MOSFET N-CH 30V 10A HSMT8

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

6103951 Pieces

Tagairt Praghas

~~USD 0.053625~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór RQ3E100BNTB i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh RQ3E100BNTB

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : RQ3E100BNTB

Monaróir : Rohm Semiconductor

Tuairisc : MOSFET N-CH 30V 10A HSMT8

Sraith : -

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 30V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 10A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10.4 mOhm @ 10A, 10V

Vgs (ú) (Max) @ Id : 2.5V @ 1mA

Muirear Geata (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1100pF @ 15V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 2W (Ta)

Teocht Oibriúcháin : 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 8-HSMT (3.2x3)

Pacáiste / Cás : 8-PowerVDFN

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : RQ3 , RQ3E1

Doiciméid do RQ3E100BNTB

datasheets : RQ3E100BNTB.pdf

Gaolmhar le haghaidh RQ3E100BNTB Rohm Semiconductor

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