RS1E200GNTB - MOSFET N-CH 30V 20A 8-HSOP

Monaróir Cuid Uimhir

RS1E200GNTB

Inmheánach Cuid Uimhir

ABC-RS1E200GNTB

Monaróir

Rohm Semiconductor

Cur Síos Achomair

MOSFET N-CH 30V 20A 8-HSOP

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

2414342 Pieces

Tagairt Praghas

~~USD 0.135575~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór RS1E200GNTB i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh RS1E200GNTB

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : RS1E200GNTB

Monaróir : Rohm Semiconductor

Tuairisc : MOSFET N-CH 30V 20A 8-HSOP

Sraith : -

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 30V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 20A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 20A, 10V

Vgs (ú) (Max) @ Id : 2.5V @ 1mA

Muirear Geata (Qg) (Max) @ Vgs : 16.8nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1080pF @ 15V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 3W (Ta), 25.1W (Tc)

Teocht Oibriúcháin : 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 8-HSOP

Pacáiste / Cás : 8-PowerTDFN

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : RS1 , RS1E2

Doiciméid do RS1E200GNTB

datasheets : RS1E200GNTB.pdf

Gaolmhar le haghaidh RS1E200GNTB Rohm Semiconductor

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