SI4966DY-T1-E3 - MOSFET 2N-CH 20V 8SOIC

Monaróir Cuid Uimhir

SI4966DY-T1-E3

Inmheánach Cuid Uimhir

ABC-SI4966DY-T1-E3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET 2N-CH 20V 8SOIC

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

52455 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI4966DY-T1-E3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SI4966DY-T1-E3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI4966DY-T1-E3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET 2N-CH 20V 8SOIC

Sraith : TrenchFET®

Stádas Cuid : Obsolete

Cineál FET : 2 N-Channel (Dual)

Gné FET : Logic Level Gate

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : -

Rds On (Max) @ Id, Vgs : 25 mOhm @ 7.1A, 4.5V

Vgs (ú) (Max) @ Id : 1.5V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 50nC @ 4.5V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : -

Cumhacht - Max : 2W

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : 8-SOIC (0.154", 3.90mm Width)

Pacáiste Gléas Soláthraithe : 8-SO

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI49 , SI4966D

Doiciméid do SI4966DY-T1-E3

datasheets : SI4966DY-T1-E3.pdf

Gaolmhar le haghaidh SI4966DY-T1-E3 Vishay Siliconix

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