SPB18P06PGATMA1 - MOSFET P-CH 60V 18.7A TO-263

Monaróir Cuid Uimhir

SPB18P06PGATMA1

Inmheánach Cuid Uimhir

ABC-SPB18P06PGATMA1

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET P-CH 60V 18.7A TO-263

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

1129072 Pieces

Tagairt Praghas

~~USD 0.289905~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SPB18P06PGATMA1 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SPB18P06PGATMA1

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SPB18P06PGATMA1

Monaróir : Infineon Technologies

Tuairisc : MOSFET P-CH 60V 18.7A TO-263

Sraith : SIPMOS®

Stádas Cuid : Active

Cineál FET : P-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 60V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 18.7A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 130 mOhm @ 13.2A, 10V

Vgs (ú) (Max) @ Id : 4V @ 1mA

Muirear Geata (Qg) (Max) @ Vgs : 28nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 860pF @ 25V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 81.1W (Ta)

Teocht Oibriúcháin : -55°C ~ 175°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : D²PAK (TO-263AB)

Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SPB18 , SPB18P0

Doiciméid do SPB18P06PGATMA1

datasheets : SPB18P06PGATMA1.pdf

Gaolmhar le haghaidh SPB18P06PGATMA1 Infineon Technologies

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