SI5855DC-T1-E3 - MOSFET P-CH 20V 2.7A 1206-8

Monaróir Cuid Uimhir

SI5855DC-T1-E3

Inmheánach Cuid Uimhir

ABC-SI5855DC-T1-E3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET P-CH 20V 2.7A 1206-8

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

28815 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI5855DC-T1-E3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Sonraíochtaí le haghaidh SI5855DC-T1-E3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI5855DC-T1-E3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET P-CH 20V 2.7A 1206-8

Sraith : TrenchFET®

Stádas Cuid : Obsolete

Cineál FET : P-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 2.7A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 110 mOhm @ 2.7A, 4.5V

Vgs (ú) (Max) @ Id : 1V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 7.7nC @ 4.5V

Vgs (Max) : ±8V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : -

Gné FET : Schottky Diode (Isolated)

Díscaoileadh Cumhachta (Max) : 1.1W (Ta)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 1206-8 ChipFET™

Pacáiste / Cás : 8-SMD, Flat Lead

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI58 , SI5855D

Doiciméid do SI5855DC-T1-E3

datasheets : SI5855DC-T1-E3.pdf

Gaolmhar le haghaidh SI5855DC-T1-E3 Vishay Siliconix

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