SI5511DC-T1-GE3 - MOSFET N/P-CH 30V 4A 1206-8

Monaróir Cuid Uimhir

SI5511DC-T1-GE3

Inmheánach Cuid Uimhir

ABC-SI5511DC-T1-GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET N/P-CH 30V 4A 1206-8

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

53989 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI5511DC-T1-GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SI5511DC-T1-GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI5511DC-T1-GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET N/P-CH 30V 4A 1206-8

Sraith : TrenchFET®

Stádas Cuid : Obsolete

Cineál FET : N and P-Channel

Gné FET : Logic Level Gate

Drain to Voltage Source (Vdss) : 30V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 4A, 3.6A

Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.8A, 4.5V

Vgs (ú) (Max) @ Id : 2V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 7.1nC @ 5V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 435pF @ 15V

Cumhacht - Max : 3.1W, 2.6W

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : 8-SMD, Flat Lead

Pacáiste Gléas Soláthraithe : 1206-8 ChipFET™

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI551 , SI5511D

Doiciméid do SI5511DC-T1-GE3

datasheets : SI5511DC-T1-GE3.pdf

Gaolmhar le haghaidh SI5511DC-T1-GE3 Vishay Siliconix

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