SI7998DP-T1-GE3 - MOSFET 2N-CH 30V 25A PPAK SO-8

Monaróir Cuid Uimhir

SI7998DP-T1-GE3

Inmheánach Cuid Uimhir

ABC-SI7998DP-T1-GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET 2N-CH 30V 25A PPAK SO-8

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

867769 Pieces

Tagairt Praghas

~~USD 0.3772~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI7998DP-T1-GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SI7998DP-T1-GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI7998DP-T1-GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET 2N-CH 30V 25A PPAK SO-8

Sraith : TrenchFET®

Stádas Cuid : Active

Cineál FET : 2 N-Channel (Dual)

Gné FET : Logic Level Gate

Drain to Voltage Source (Vdss) : 30V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 25A, 30A

Rds On (Max) @ Id, Vgs : 9.3 mOhm @ 15A, 10V

Vgs (ú) (Max) @ Id : 2.5V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 26nC @ 10V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1100pF @ 15V

Cumhacht - Max : 22W, 40W

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : PowerPAK® SO-8 Dual

Pacáiste Gléas Soláthraithe : PowerPAK® SO-8 Dual

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI799 , SI7998D

Doiciméid do SI7998DP-T1-GE3

datasheets : SI7998DP-T1-GE3.pdf

Gaolmhar le haghaidh SI7998DP-T1-GE3 Vishay Siliconix

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