SI4477DY-T1-GE3 - MOSFET P-CH 20V 26.6A 8-SOIC

Monaróir Cuid Uimhir

SI4477DY-T1-GE3

Inmheánach Cuid Uimhir

ABC-SI4477DY-T1-GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET P-CH 20V 26.6A 8-SOIC

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

950411 Pieces

Tagairt Praghas

~~USD 0.3444~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SI4477DY-T1-GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SI4477DY-T1-GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI4477DY-T1-GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET P-CH 20V 26.6A 8-SOIC

Sraith : TrenchFET®

Stádas Cuid : Active

Cineál FET : P-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 26.6A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 18A, 4.5V

Vgs (ú) (Max) @ Id : 1.5V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 190nC @ 10V

Vgs (Max) : ±12V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 4600pF @ 10V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 3W (Ta), 6.6W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 8-SO

Pacáiste / Cás : 8-SOIC (0.154", 3.90mm Width)

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI447 , SI4477D

Doiciméid do SI4477DY-T1-GE3

datasheets : SI4477DY-T1-GE3.pdf

Gaolmhar le haghaidh SI4477DY-T1-GE3 Vishay Siliconix

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