IPG20N10S4L22ATMA1 - MOSFET 2N-CH 8TDSON

Monaróir Cuid Uimhir

IPG20N10S4L22ATMA1

Inmheánach Cuid Uimhir

ABC-IPG20N10S4L22ATMA1

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET 2N-CH 8TDSON

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

849338 Pieces

Tagairt Praghas

~~USD 0.385385~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór IPG20N10S4L22ATMA1 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh IPG20N10S4L22ATMA1

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : IPG20N10S4L22ATMA1

Monaróir : Infineon Technologies

Tuairisc : MOSFET 2N-CH 8TDSON

Sraith : Automotive, AEC-Q101, OptiMOS™

Stádas Cuid : Active

Cineál FET : 2 N-Channel (Dual)

Gné FET : Logic Level Gate

Drain to Voltage Source (Vdss) : 100V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 20A

Rds On (Max) @ Id, Vgs : 22 mOhm @ 17A, 10V

Vgs (ú) (Max) @ Id : 2.1V @ 25µA

Muirear Geata (Qg) (Max) @ Vgs : 27nC @ 10V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1755pF @ 25V

Cumhacht - Max : 60W

Teocht Oibriúcháin : -55°C ~ 175°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste / Cás : 8-PowerVDFN

Pacáiste Gléas Soláthraithe : PG-TDSON-8-4

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : IPG20N , IPG20N10S

Doiciméid do IPG20N10S4L22ATMA1

datasheets : IPG20N10S4L22ATMA1.pdf

Gaolmhar le haghaidh IPG20N10S4L22ATMA1 Infineon Technologies

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