IPD180N10N3GBTMA1 - MOSFET N-CH 100V 43A TO252-3

Monaróir Cuid Uimhir

IPD180N10N3GBTMA1

Inmheánach Cuid Uimhir

ABC-IPD180N10N3GBTMA1

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET N-CH 100V 43A TO252-3

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

1416982 Pieces

Tagairt Praghas

~~USD 0.231~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór IPD180N10N3GBTMA1 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh IPD180N10N3GBTMA1

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : IPD180N10N3GBTMA1

Monaróir : Infineon Technologies

Tuairisc : MOSFET N-CH 100V 43A TO252-3

Sraith : OptiMOS™

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 100V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 43A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 6V, 10V

Rds On (Max) @ Id, Vgs : 18 mOhm @ 33A, 10V

Vgs (ú) (Max) @ Id : 3.5V @ 33µA

Muirear Geata (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1800pF @ 50V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 71W (Tc)

Teocht Oibriúcháin : -55°C ~ 175°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : PG-TO252-3

Pacáiste / Cás : TO-252-3, DPak (2 Leads + Tab), SC-63

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : IPD18 , IPD180N1

Doiciméid do IPD180N10N3GBTMA1

datasheets : IPD180N10N3GBTMA1.pdf

Gaolmhar le haghaidh IPD180N10N3GBTMA1 Infineon Technologies

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