TPH2900ENH,L1Q - MOSFET N-CH 200V 33A SOP8

Monaróir Cuid Uimhir

TPH2900ENH,L1Q

Inmheánach Cuid Uimhir

ABC-TPH2900ENH,L1Q

Monaróir

Toshiba Semiconductor and Storage

Cur Síos Achomair

MOSFET N-CH 200V 33A SOP8

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

616882 Pieces

Tagairt Praghas

~~USD 0.5306~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór TPH2900ENH,L1Q i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Sonraíochtaí le haghaidh TPH2900ENH,L1Q

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : TPH2900ENH,L1Q

Monaróir : Toshiba Semiconductor and Storage

Tuairisc : MOSFET N-CH 200V 33A SOP8

Sraith : U-MOSVIII-H

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 200V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 33A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 29 mOhm @ 16.5A, 10V

Vgs (ú) (Max) @ Id : 4V @ 1mA

Muirear Geata (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 2200pF @ 100V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 78W (Tc)

Teocht Oibriúcháin : 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 8-SOP Advance (5x5)

Pacáiste / Cás : 8-PowerVDFN

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : TPH2 , TPH2900

Doiciméid do TPH2900ENH,L1Q

datasheets : TPH2900ENH,L1Q.pdf

Gaolmhar le haghaidh TPH2900ENH,L1Q Toshiba Semiconductor and Storage

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