IRFD113PBF - MOSFET N-CH 60V 800MA 4-DIP

Monaróir Cuid Uimhir

IRFD113PBF

Inmheánach Cuid Uimhir

ABC-IRFD113PBF

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET N-CH 60V 800MA 4-DIP

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

273903 Pieces

Tagairt Praghas

~~USD 1.195~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór IRFD113PBF i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Sonraíochtaí le haghaidh IRFD113PBF

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : IRFD113PBF

Monaróir : Vishay Siliconix

Tuairisc : MOSFET N-CH 60V 800MA 4-DIP

Sraith : -

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 60V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 800mA (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 800 mOhm @ 800mA, 10V

Vgs (ú) (Max) @ Id : 4V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 7nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 200pF @ 25V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 1W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Through Hole

Pacáiste Gléas Soláthraithe : 4-HVMDIP

Pacáiste / Cás : 4-DIP (0.300", 7.62mm)

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : IRF , IRFD1

Doiciméid do IRFD113PBF

datasheets : IRFD113PBF.pdf

Gaolmhar le haghaidh IRFD113PBF Vishay Siliconix

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