NDD04N60Z-1G - MOSFET N-CH 600V 4A IPAK

Monaróir Cuid Uimhir

NDD04N60Z-1G

Inmheánach Cuid Uimhir

ABC-NDD04N60Z-1G

Monaróir

ON Semiconductor

Cur Síos Achomair

MOSFET N-CH 600V 4A IPAK

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

38304 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór NDD04N60Z-1G i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Sonraíochtaí le haghaidh NDD04N60Z-1G

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : NDD04N60Z-1G

Monaróir : ON Semiconductor

Tuairisc : MOSFET N-CH 600V 4A IPAK

Sraith : -

Stádas Cuid : Obsolete

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 600V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 4.1A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 2 Ohm @ 2A, 10V

Vgs (ú) (Max) @ Id : 4.5V @ 50µA

Muirear Geata (Qg) (Max) @ Vgs : 29nC @ 10V

Vgs (Max) : ±30V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 640pF @ 25V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 83W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Through Hole

Pacáiste Gléas Soláthraithe : I-PAK

Pacáiste / Cás : TO-251-3 Short Leads, IPak, TO-251AA

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : NDD0 , NDD04N

Doiciméid do NDD04N60Z-1G

datasheets : NDD04N60Z-1G.pdf

Gaolmhar le haghaidh NDD04N60Z-1G ON Semiconductor

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