SIS414DN-T1-GE3 - MOSFET N-CH 30V 20A 1212-8 PPAK

Monaróir Cuid Uimhir

SIS414DN-T1-GE3

Inmheánach Cuid Uimhir

ABC-SIS414DN-T1-GE3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET N-CH 30V 20A 1212-8 PPAK

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

43104 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

ABC leathsheoltóra ní mór SIS414DN-T1-GE3 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SIS414DN-T1-GE3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SIS414DN-T1-GE3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET N-CH 30V 20A 1212-8 PPAK

Sraith : TrenchFET®

Stádas Cuid : Obsolete

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 30V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 20A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 16 mOhm @ 10A, 4.5V

Vgs (ú) (Max) @ Id : 1.5V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 33nC @ 10V

Vgs (Max) : ±12V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 795pF @ 15V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 3.4W (Ta), 31W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : PowerPAK® 1212-8

Pacáiste / Cás : PowerPAK® 1212-8

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SIS41 , SIS414D

Doiciméid do SIS414DN-T1-GE3

datasheets : SIS414DN-T1-GE3.pdf

Gaolmhar le haghaidh SIS414DN-T1-GE3 Vishay Siliconix

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